The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2017
Filed:
Dec. 19, 2014
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Shyh-Wei Cheng, Zhudong Township, Hsinchu County, TW;
Jui-Chun Weng, Taipei, TW;
Hsi-Cheng Hsu, Taichung, TW;
Chih-Yu Wang, Taichung, TW;
Jung-Kuo Tu, Hsinchu, TW;
Che-Jung Chu, Hsinchu, TW;
Yu-Ting Hsu, Zhubei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method for forming an integrated circuit having Micro-electromechanical Systems (MEMS) includes forming at least two recesses into a first layer, forming at least two recesses into a second layer, the at least two recesses of the second layer being complementary to the recesses of the first layer. An intermediate layer is bonded onto the second layer, the intermediate layer includes through-holes corresponding to the recesses of the second layer. The first layer is bonded to the intermediate layer such that cavities are formed, the cavities to act as operating environments for MEMS devices. The two cavities have different pressures.