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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9559011 B1

PDFFull Text
Date of Patent:
Jan. 31, 2017

Filed:

Oct. 21, 2015

Mechanisms for forming finfets with different fin heights

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Tsung-Yu Chiang, New Taipei, TW;

Chung-Wei Lin, Toufen Township, TW;

Kuang-Hsin Chen, Jung-Li, TW;

Bor-Zen Tien, Hsinchu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

Phuc Dang

Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 31/062 (2012.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01); H01L 21/8234 (2006.01); H01L 21/263 (2006.01); H01L 21/266 (2006.01); H01L 21/762 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 21/84 (2006.01); H01L 29/66 (2006.01); H01L 27/12 (2006.01); H01L 21/3115 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823481 (2013.01); H01L 21/266 (2013.01); H01L 21/2636 (2013.01); H01L 21/31111 (2013.01); H01L 21/31116 (2013.01); H01L 21/31155 (2013.01); H01L 21/76224 (2013.01); H01L 21/76237 (2013.01); H01L 21/823431 (2013.01); H01L 21/845 (2013.01); H01L 27/0886 (2013.01); H01L 27/1211 (2013.01); H01L 29/0649 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract

Methods for forming a semiconductor device are provided. The method includes forming a first fin and a second fin over a substrate and forming a first isolation structures and a second isolation structure adjacent to the substrate. The first fin is partially surrounded by the first isolation structure and a second fin is partially surrounded by the second isolation structure, and the first isolation structure has a dopant concentration higher than that of the second isolation structure.

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Quick Actions:

Chiang, Tsung-Yu. (2017). Mechanisms for forming finfets with different fin heights (U.S. Patent No. 9559011). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9559011

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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