The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2017
Filed:
Oct. 21, 2015
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Tsung-Yu Chiang, New Taipei, TW;
Chung-Wei Lin, Toufen Township, TW;
Kuang-Hsin Chen, Jung-Li, TW;
Bor-Zen Tien, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 31/062 (2012.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01); H01L 21/8234 (2006.01); H01L 21/263 (2006.01); H01L 21/266 (2006.01); H01L 21/762 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 21/84 (2006.01); H01L 29/66 (2006.01); H01L 27/12 (2006.01); H01L 21/3115 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823481 (2013.01); H01L 21/266 (2013.01); H01L 21/2636 (2013.01); H01L 21/31111 (2013.01); H01L 21/31116 (2013.01); H01L 21/31155 (2013.01); H01L 21/76224 (2013.01); H01L 21/76237 (2013.01); H01L 21/823431 (2013.01); H01L 21/845 (2013.01); H01L 27/0886 (2013.01); H01L 27/1211 (2013.01); H01L 29/0649 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract
Methods for forming a semiconductor device are provided. The method includes forming a first fin and a second fin over a substrate and forming a first isolation structures and a second isolation structure adjacent to the substrate. The first fin is partially surrounded by the first isolation structure and a second fin is partially surrounded by the second isolation structure, and the first isolation structure has a dopant concentration higher than that of the second isolation structure.