The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2017
Filed:
Sep. 18, 2013
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Tai-I Yang, Hsinchu, TW;
Hong-Seng Shue, Hsinchu County, TW;
Kun-Ming Huang, Taipei, TW;
Chih-Heng Shen, Hsinchu County, TW;
Po-Tao Chu, New Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A semiconductor structure includes a semiconductor substrate, a first doped region, a second doped region and a dielectric. The first doped region and the second doped region respectively has an aspect ratio and a dopant concentration uniformity along a depth in the semiconductor substrate. The dielectric is between the first doped region and the second doped region. The dopant concentration uniformity is within 0.2% and the aspect ratio of the semiconductor substrate is greater than about 10.