The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 31, 2017

Filed:

Dec. 24, 2014
Applicant:

Jsr Corporation, Tokyo, JP;

Inventors:

Hiroyuki Komatsu, Tokyo, JP;

Takehiko Naruoka, Tokyo, JP;

Shinya Minegishi, Tokyo, JP;

Kaori Sakai, Tokyo, JP;

Tomoki Nagai, Tokyo, JP;

Assignee:

JSR CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01); B81C 1/00 (2006.01); G03F 7/00 (2006.01); G03F 7/038 (2006.01); C09D 133/06 (2006.01); C09D 125/14 (2006.01); G03F 7/11 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0388 (2013.01); C09D 125/14 (2013.01); C09D 133/06 (2013.01); G03F 7/0002 (2013.01); G03F 7/11 (2013.01);
Abstract

A base film-forming composition includes a compound including a group capable of reacting with Si—OH or Si—H, and a solvent. The base film-forming composition is for forming a base film provided between a layer including a silicon atom and a directed self-assembling film in a directed self-assembly lithography process. The receding contact angle of the base film for pure water is no less than 70° and no greater than 90°. The compound is preferably represented by formula (1). In the formula (1), A represents a linking group having a valency of (m+n); D represents a monovalent organic group having at least 10 carbon atoms; E represents the group capable of reacting with Si—OH or Si—H; and m and n are each independently an integer of 1 to 200.


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