The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2017
Filed:
Dec. 08, 2015
International Business Machines Corporation, Armonk, NY (US);
Chung H. Lam, Peekskill, NY (US);
Chung-hsun Lin, White Plains, NY (US);
Darsen D. Lu, Mount Kisco, NY (US);
Philip J. Oldiges, Lagrangeville, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
A field effect transistor device comprises a semiconductor substrate, a doped source layer arranged on the semiconductor substrate, an insulator layer arranged on the doped source layer, a fin arranged on the insulator layer, a source region extension portion extending from the doped source layer and through the fin, a gate stack arranged over a channel region of the fin and adjacent to the source region extension portion, a drain region arranged on the fin adjacent to the gate stack; the drain region having a graduated doping concentration.