The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2017
Filed:
Apr. 16, 2012
Hailiang LI, Beijing, CN;
Changqing Xie, Beijing, CN;
Ming Liu, Beijing, CN;
Dongmei LI, Beijing, CN;
Jiebin Niu, Beijing, CN;
Lina Shi, Beijing, CN;
Xiaoli Zhu, Beijing, CN;
Hailiang Li, Beijing, CN;
Changqing Xie, Beijing, CN;
Ming Liu, Beijing, CN;
Dongmei Li, Beijing, CN;
Jiebin Niu, Beijing, CN;
Lina Shi, Beijing, CN;
Xiaoli Zhu, Beijing, CN;
Abstract
A defect detection system for an extreme ultraviolet lithography mask comprises an extreme ultraviolet light source (), extreme ultraviolet light transmission parts (), an extreme ultraviolet lithography mask (), a photon sieve () and a collection () and analysis () system. Point light source beams emitted by the extreme ultraviolet light source () are focused on the extreme ultraviolet lithography mask () through the extreme ultraviolet light transmission parts (); the extreme ultraviolet lithography mask () emits scattered light and illuminates the photon sieve (); and the photon sieve () forms a dark field image and transmits the same to the collection () and analysis () system. The defect detection system for the extreme ultraviolet photolithographic mask uses the photon sieve to replace a Schwarzchild objective, thereby realizing lower cost, relatively small size and high resolution.