The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 10, 2017

Filed:

Sep. 18, 2015
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Chun-Hsiang Fan, Hsin-Chu, TW;

Yung-Ta Li, Kaohsiung, TW;

Mao-Lin Huang, Hsin-Chu, TW;

Chun-Hsiung Lin, Zhubei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/06 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66818 (2013.01); H01L 21/30612 (2013.01); H01L 29/0642 (2013.01); H01L 29/42392 (2013.01);
Abstract

An embodiment is a method including forming an epitaxial portion over a substrate, the epitaxial portion including a III-V material. A damaged material layer being on at least one surface of the epitaxial portion. The method further including oxidizing at least outer surfaces of the damaged material layer to form an oxide layer, selectively removing the oxide layer, and repeating the oxidizing and the selectively removing steps while at least a portion of the damaged material layer remains on the epitaxial portion.


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