The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2017
Filed:
Apr. 04, 2014
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Ru-Shang Hsiao, Jhubei, TW;
Ling-Sung Wang, Tainan, TW;
Chih-Mu Huang, Tainan, TW;
Yao-Tsung Chen, Kaohsiung, TW;
Ming-Tsang Tsai, Kaohsiung, TW;
Kuan-Yu Chen, Tainan, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor device having an open profile gate electrode, and a method of manufacture, are provided. A funnel-shaped opening is formed in a dielectric layer and a gate electrode is formed in the funnel-shaped opening, thereby providing a gate electrode having an open profile. In some embodiments, first and second gate spacers are formed alongside a dummy gate electrode. The dummy gate electrode is removed and upper portions of the first and second gate spacers are removed. The first and second gate spacers may be formed of different materials having different etch rates.