The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2017
Filed:
Feb. 10, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Ying-Hao Su, Hsinchu, TW;
Yu-Lun Liu, Changhua County, TW;
Chi-Kang Chang, New Taipei, TW;
Shih-Chi Fu, Hsinchu, TW;
Kuei-Shun Chen, Hsinchu, TW;
Chloe Hsu, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A method of fabricating a semiconductor device is disclosed. The method includes forming a flowable-material (FM) layer over a substrate. The substrate has a first region and a second region. A top surface of the FM layer in the first region is higher than a top surface of the FM layer in the second region. The method also includes forming a plurality of trenches in the FM layer in the first region and performing annealing process to reflow the FM layer, wherein the plurality of trenches are filled with the FM layer.