The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 10, 2017

Filed:

Dec. 05, 2014
Applicant:

Shin-etsu Chemical Co., Ltd., Tokyo, JP;

Inventors:

Kouhei Sasamoto, Joetsu, JP;

Yukio Inazuki, Joetsu, JP;

Souichi Fukaya, Joetsu, JP;

Hideo Nakagawa, Joetsu, JP;

Hideo Kaneko, Joetsu, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/26 (2012.01); G03F 1/30 (2012.01); G03F 1/46 (2012.01); G03F 1/54 (2012.01);
U.S. Cl.
CPC ...
G03F 1/46 (2013.01); G03F 1/26 (2013.01); G03F 1/30 (2013.01); G03F 1/54 (2013.01);
Abstract

A photomask blank comprising a transparent substrate and a chromium-containing film deposited thereon is provided. The chromium-containing film comprises at least one CrC compound layer comprising up to 50 at % of Cr, at least 25 at % of O and/or N, and at least 5 at % of C. From the blank, a photomask having a photomask pattern formed on the substrate is produced, the photomask being used in photolithography of forming a resist pattern with a line width of up to 0.1 μm, using exposure light having a wavelength of up to 250 nm.


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