The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 03, 2017

Filed:

Sep. 08, 2014
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Johannes Georg Laven, Taufkirchen, DE;

Hans-Joachim Schulze, Taufkirchen, DE;

Matteo Dainese, Villach, AT;

Peter Lechner, Holzkirchen, DE;

Roman Baburske, Otterfing, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7813 (2013.01); H01L 29/4236 (2013.01); H01L 29/66734 (2013.01);
Abstract

A semiconductor device includes transistor cells with source zones of a first conductivity type and body zones of a second conductivity type. The source and body zones are formed in a semiconductor mesa formed from a portion of a semiconductor body. Control structures include first portions extending into the semiconductor body on at least two opposing sides of the semiconductor mesa, second portions in a distance to the first surface between the first portions, and third portions in a distance to the first surface and connecting the first and the second portions, wherein constricted sections of the semiconductor mesa are formed between neighboring third portions.


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