The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2017
Filed:
Jun. 12, 2015
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Yen-Ting Chiang, Tainan, TW;
Ching-Chun Wang, Tainan, TW;
Dun-Nian Yaung, Taipei, TW;
Feng-Chi Hung, Hsin-Chu County, TW;
Hsiao-Hui Tseng, Tainan, TW;
Ming-Tsong Wang, Taipei, TW;
Shyh-Fann Ting, Tainan, TW;
Wei Chuang Wu, Tainan, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A pad structure for a complementary metal-oxide-semiconductor (CMOS) image sensor is provided. A semiconductor substrate is arranged over a back end of line (BEOL) metallization stack, and comprises a scribe line opening. A buffer layer lines the scribe line opening. A conductive pad comprises a base region and a protruding region. The base region is arranged over the buffer layer in the scribe line opening, and the protruding region protrudes from the base region into the BEOL metallization stack. A dielectric layer fills the scribe line opening over the conductive pad, and is substantially flush with an upper surface of the semiconductor substrate. Further, a method for manufacturing the pad structure, as well as the CMOS image sensor, are provided.