The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2017
Filed:
Mar. 23, 2015
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/768 (2006.01); C23C 16/08 (2006.01); C23C 16/455 (2006.01); C23C 16/46 (2006.01); H01L 21/3205 (2006.01); C23C 16/14 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76879 (2013.01); C23C 16/08 (2013.01); C23C 16/14 (2013.01); C23C 16/455 (2013.01); C23C 16/45525 (2013.01); C23C 16/46 (2013.01); H01L 21/28556 (2013.01); H01L 21/28562 (2013.01); H01L 21/32051 (2013.01); H01L 21/76877 (2013.01);
Abstract
A tungsten film forming method includes: supplying a tungsten chloride gas as a source material of tungsten and a reducing gas towards a substrate to be processed under a depressurized atmosphere to cause reaction between the tungsten chloride gas and the reducing gas while heating the substrate to be processed, such that a main tungsten film is directly formed on a surface of the substrate to be processed without forming an initial tungsten film for nucleus generation.