The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2016
Filed:
Jul. 31, 2013
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Peter F. Kurunczi, Cambridge, MA (US);
Neil J. Bassom, Hamilton, MA (US);
Wilhelm P. Platow, Newburyport, MA (US);
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Abstract
A system and method of improving the performance and extending the lifetime of an ion source is disclosed. The ion source includes an ion source chamber, a suppression electrode and a ground electrode. In the processing mode, the ion source chamber may be biased to a first positive voltage, while the suppression electrode is biased to a negative voltage to attract positive ions from within the chamber through an aperture and toward the workpiece. In the cleaning mode, the ion source chamber may be grounded, while the suppression electrode is biased using a power supply having a high current capability. The voltage applied to the suppression electrode creates a plasma between the suppression electrode and the ion source chamber, and between the suppression electrode and the ground electrode.