The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2016
Filed:
Aug. 06, 2015
Applicants:
Go-jun Kim, Suwon-si, KR;
Vladimir Volynets, Suwon-si, KR;
Sang-jin an, Suwon-si, KR;
Hee-jeon Yang, Suwon-si, KR;
Sang-heon Lee, Seongnam-si, KR;
Sung-keun Cho, Seoul, KR;
Xinglong Chen, Seongnam-si, KR;
In-ho Choi, suwon-si, KR;
Inventors:
Go-jun Kim, Suwon-si, KR;
Vladimir Volynets, Suwon-si, KR;
Sang-jin An, Suwon-si, KR;
Hee-jeon Yang, Suwon-si, KR;
Sang-heon Lee, Seongnam-si, KR;
Sung-keun Cho, Seoul, KR;
Xinglong Chen, Seongnam-si, KR;
In-ho Choi, suwon-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/311 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01J 37/32357 (2013.01);
Abstract
An etching method using plasma includes generating plasma by supplying process gases to at least one remote plasma source (RPS) and applying power to the at least one RPS, and etching an etching object by supplying water (HO) and the plasma to a process chamber.