The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 13, 2016

Filed:

Feb. 18, 2014
Applicant:

Shin-etsu Chemical Co., Ltd., Tokyo, JP;

Inventors:

Tomohiro Kobayashi, Joetsu, JP;

Kazuhiro Katayama, Joetsu, JP;

Kentaro Kumaki, Joetsu, JP;

Chuanwen Lin, Joetsu, JP;

Masaki Ohashi, Joetsu, JP;

Masahiro Fukushima, Joetsu, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/004 (2006.01); G03F 7/38 (2006.01); G03F 7/40 (2006.01); G03F 7/039 (2006.01); G03F 7/11 (2006.01); G03F 7/20 (2006.01); G03F 7/32 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0045 (2013.01); G03F 7/0046 (2013.01); G03F 7/0395 (2013.01); G03F 7/0397 (2013.01); G03F 7/11 (2013.01); G03F 7/2041 (2013.01); G03F 7/325 (2013.01); G03F 7/38 (2013.01); G03F 7/40 (2013.01);
Abstract

A negative pattern is formed by coating a resist composition comprising (A) a polymer having an acid labile group, adapted to change its polarity under the action of acid, (B) a photoacid generator, and (C) an organic solvent onto a substrate, baking, exposing the resist film to high-energy radiation, PEB, and developing in an organic solvent-based developer to selectively dissolve the unexposed region of resist film. The photoacid generator has the formula: R—COOC(CF)—CHSORRRSwherein Ris a monovalent hydrocarbon group, R, Rand Rare an alkyl, alkenyl, oxoalkyl, aryl, aralkyl or aryloxoalkyl group, or may bond together to form a ring with the sulfur atom.


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