The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2016
Filed:
Dec. 19, 2013
International Business Machines Corporation, Armonk, NY (US);
Jin Cai, Cortlandt Manor, NY (US);
Kevin K. Chan, Staten Island, NY (US);
Tak H. Ning, Yorktown Heights, NY (US);
Jeng-Bang Yau, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Lateral SOI bipolar transistor structures are provided including an intrinsic base semiconductor material portion in which all surfaces of the intrinsic base not forming an interface with either a collector semiconductor material portion or an emitter semiconductor material portion, contain an extrinsic base semiconductor material portion. Each extrinsic base semiconductor material portion is of the same conductivity type as that of the intrinsic base semiconductor material portion, yet each extrinsic base semiconductor material portion has a higher dopant concentration than the intrinsic base semiconductor material portion. The intrinsic base semiconductor material portion of the lateral SOI bipolar transistors of the present application does not have any interface with surrounding insulator material layers. As such, any potential charge build-up in the surrounding insulator material layers is shielded by the extrinsic base semiconductor material portions.