The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 2016

Filed:

Jan. 29, 2015
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Kai-Kuang Ho, Hsin-Chu, TW;

Chen-Hsiao Wang, Hsinchu, TW;

Yi-Feng Hsu, Hsinchu, TW;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 24/03 (2013.01); H01L 2224/0312 (2013.01); H01L 2224/0361 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05005 (2013.01); H01L 2224/05017 (2013.01);
Abstract

A semiconductor structure with an under bump metallization (UBM) layer is provided. The semiconductor structure at least includes a substrate, a metal pad disposed on the substrate, an insulating layer covering the substrate and an edge of the metal pad, wherein at least one recess is disposed within the insulating layer and a first UBM layer contacts the metal pad. The recess is adjacent to the metal pad and the recess is in the shape of a ring. The first UBM layer contacts part of the recess.


Find Patent Forward Citations

Quick Actions:

Ho, Kai-Kuang. (2016). Semiconductor structure with ubm layer and method of fabricating the same (U.S. Patent No. 9502366). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9502366

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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