The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 2016

Filed:

Jan. 30, 2015
Applicant:

Hitachi High-technologies Corporation, Tokyo, JP;

Inventors:

Shunsuke Kanazawa, Kudamatsu, JP;

Naoki Yasui, Kudamatsu, JP;

Michikazu Morimoto, Kudamatsu, JP;

Yasuo Ohgoshi, Kudamatsu, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23F 1/00 (2006.01); H01J 37/32 (2006.01); H01L 21/3213 (2006.01); C23F 4/00 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32311 (2013.01); C23F 4/00 (2013.01); H01J 37/32146 (2013.01); H01J 37/32155 (2013.01); H01J 37/32165 (2013.01); H01J 37/32302 (2013.01); H01L 21/32137 (2013.01);
Abstract

A plasma processing apparatus includes a processing chamber which plasma-processes a sample, a first high-frequency power supply which supplies first high-frequency power for plasma generation to the processing chamber, a second high-frequency power supply which supplies second high-frequency power to a sample stage on which the sample is placed and a pulse generation device which generate first pulses for time-modulating the first high-frequency power and second pulses for time-modulating the second high-frequency power. The pulse generation device includes a control device which controls the first and second pulses so that frequency of the first pulses is higher than frequency of the second pulses and the on-period of the second pulse is contained in the on-period of the first pulse.


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