The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 2016

Filed:

Mar. 18, 2015
Applicant:

Tel Epion Inc., Billerica, MA (US);

Inventors:

Soo Doo Chae, Guilderland, NY (US);

Youngdon Chang, Gyeonggi-do, KR;

Il-seok Song, Gyeonggi-do, KR;

Noel Russell, Waterford, NY (US);

Assignee:

TEL Epion Inc., Billerica, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); G03F 7/00 (2006.01); H01L 21/308 (2006.01); C23F 4/00 (2006.01);
U.S. Cl.
CPC ...
G03F 7/00 (2013.01); C23F 4/00 (2013.01); H01L 21/3086 (2013.01);
Abstract

A method for patterning a substrate is described. The method includes receiving a substrate having a patterned layer, wherein the patterned layer defines a first mandrel pattern, and wherein a first material layer of a first composition is conformally deposited over the first mandrel pattern. The method further includes partially removing the first material layer using a first gas cluster ion beam (GCIB) etching process to expose a top surface of the first mandrel pattern, open a portion of the first material layer at a bottom region adjacent a feature of the first mandrel pattern, and retain a remaining portion of the first material layer on sidewalls of the first mandrel pattern; and selectively removing the first mandrel pattern using one or more etching processes to leave a second mandrel pattern comprising the remaining portion of the first material layer that remained on the sidewalls of the first mandrel pattern.


Find Patent Forward Citations

Loading…