logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9496346 B1

PDFFull Text
Date of Patent:
Nov. 15, 2016

Filed:

Dec. 18, 2015

Silicon carbide device and a method for forming a silicon carbide device

Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Roland Rupp, Lauf, DE;

Christian Hecht, Buckenhof, DE;

Jens Konrath, Villach, AT;

Wolfgang Bergner, Klagenfurt, AT;

Hans-Joachim Schulze, Taufkirchen, DE;

Rudolf Elpelt, Erlangen, DE;

Assignee:

Infineon Technology AG, Neubiberg, DE;

Attorney:

Eschweiler & Associates, LLC

Primary Examiner:

Brook Kebede

Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 29/16 (2006.01); H01L 21/04 (2006.01); H01L 29/66 (2006.01); H01L 21/56 (2006.01); H01L 23/29 (2006.01); H01L 23/31 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/045 (2013.01); H01L 21/046 (2013.01); H01L 21/0495 (2013.01); H01L 21/565 (2013.01); H01L 23/291 (2013.01); H01L 23/293 (2013.01); H01L 23/3135 (2013.01); H01L 23/3171 (2013.01); H01L 29/0623 (2013.01); H01L 29/6606 (2013.01); H01L 29/66068 (2013.01); H01L 21/047 (2013.01); H01L 29/0615 (2013.01); H01L 29/0619 (2013.01); H01L 29/7811 (2013.01); H01L 29/872 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A silicon carbide device includes a silicon carbide substrate, an inorganic passivation layer structure and a molding material layer. The inorganic passivation layer structure laterally covers at least partly a main surface of the silicon carbide substrate and the molding material layer is arranged adjacent to the inorganic passivation layer structure.

Find Patent Forward Citations

Rupp, Roland. (2016). Silicon carbide device and a method for forming a silicon carbide device (U.S. Patent No. 9496346). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9496346

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…