The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2016
Filed:
Feb. 13, 2015
Xin Lin, Phoenix, AZ (US);
Daniel J. Blomberg, Chandler, AZ (US);
Hongning Yang, Chandler, AZ (US);
Jiang-kai Zuo, Chandler, AZ (US);
Xin Lin, Phoenix, AZ (US);
Daniel J. Blomberg, Chandler, AZ (US);
Hongning Yang, Chandler, AZ (US);
Jiang-Kai Zuo, Chandler, AZ (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A trench-isolated RESURF diode structure () is provided which includes a substrate () in which is formed anode () and cathode () contact regions separated from one another by a shallow trench isolation region (), along with a buried cathode extension region () formed under a RESURF anode extension region () such that the cathode extension region () extends beyond the cathode contact () to be sandwiched between upper and lower regions () of opposite conductivity type.