The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2016
Filed:
Jun. 26, 2012
Applicants:
Hua Feng Chen, Hsin-Chu, TW;
Shu-hui Wang, Hsin-Chu, TW;
Mu-chi Chiang, Hsin-Chu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/11 (2006.01); H01L 49/02 (2006.01); H01L 27/06 (2006.01); H01L 27/08 (2006.01);
U.S. Cl.
CPC ...
H01L 28/20 (2013.01); H01L 27/0629 (2013.01); H01L 27/0802 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A semiconductor structure includes a resistor on a substrate formed substantially simultaneously with other device elements, such as one or more transistors. A diffusion barrier layer deposited on a substrate is patterned to form a resistor and barrier layers under a transistor gate. A filler material, a first connector, and a second connector are formed on the resistor in a substantially similar manner as that used to form the gate of the transistor. The filler material is removed.