The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2016
Filed:
Jun. 25, 2012
Tai-i Yang, Hsinchu, TW;
Marcus Yang, Hsinchu, TW;
Chih-hao Lin, Hsinchu, TW;
Hong-seng Shue, Zhubei, TW;
Ruei-hung Jang, Jhubei, TW;
Tai-I Yang, Hsinchu, TW;
Marcus Yang, Hsinchu, TW;
Chih-Hao Lin, Hsinchu, TW;
Hong-Seng Shue, Zhubei, TW;
Ruei-Hung Jang, Jhubei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
The present disclosure relates to a method of fabricating a semiconductor device. A semiconductor device includes a bond pad and a fuse layer. The bond pad includes a coating on an upper surface. A dielectric layer is formed over the bond pad and the fuse layer. A passivation layer is formed over the dielectric layer. An etch is performed to form a bond pad opening and a fuse opening. The etch is performed using only a single mask. The fuse opening defines a fuse window. The upper surface of the bond pad is exposed by substantially removing the coating from the entire upper surface.