The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2016

Filed:

Mar. 23, 2015
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Kun Xu, Fremont, CA (US);

Feng Liu, San Jose, CA (US);

Dominic J. Benvegnu, La Honda, CA (US);

Boguslaw A. Swedek, Cupertino, CA (US);

Yuchun Wang, Santa Clara, CA (US);

Wen-Chiang Tu, Mountain View, CA (US);

Laksh Karuppiah, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); H01L 21/306 (2006.01); C01G 9/00 (2006.01); B24B 37/005 (2012.01); B24B 37/013 (2012.01); B24B 49/12 (2006.01); G01B 11/06 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 22/26 (2013.01); B24B 37/005 (2013.01); B24B 37/013 (2013.01); B24B 49/12 (2013.01); C01G 9/00 (2013.01); G01B 11/0625 (2013.01); G01B 11/0683 (2013.01); H01L 21/30625 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01); H01L 45/144 (2013.01); H01L 45/1683 (2013.01);
Abstract

During polishing of a first substrate at a first polishing station, a sequence of measurements by a first in-situ monitoring system is monitored to determining a first time at which the first sequence exhibits a first predefined feature indicating a predetermined thickness of an overlying layer, and during polishing of the first substrate at a second polishing station, a sequence of measurements by a second in-situ monitoring system is monitored to determine a second time indicating clearance of the overlying layer and exposure of the underlying layer. The first time is used to calculate a first adjusted polishing pressure for a second substrate at the first polishing station, and the second time is used to calculate a second adjusted polishing pressure for the second substrate at the second polishing station.


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