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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9494862 B1

PDFFull Text
Date of Patent:
Nov. 15, 2016

Filed:

Jun. 19, 2013

Resist underlayer film forming composition containing silicon having sulfone structure and amine structure

Applicant:

Nissan Chemical Industries, Ltd., Tokyo, JP;

Inventors:

Yuta Kanno, Toyama, JP;

Kenji Takase, Toyama, JP;

Makoto Nakajima, Toyama, JP;

Satoshi Takeda, Toyama, JP;

Hiroyuki Wakayama, Toyama, JP;

Assignee:

NISSAN CHEMICAL INDUSTRIES, LTD., Tokyo, JP;

Attorney:

Oliff PLC

Primary Examiner:

Sin Lee

Int. Cl.
CPC ...
G03F 7/075 (2006.01); G03F 7/30 (2006.01); G03F 7/32 (2006.01); G03F 7/36 (2006.01); G03F 7/38 (2006.01); G03F 7/40 (2006.01); G03F 7/09 (2006.01); C07F 7/18 (2006.01); C08G 77/00 (2006.01); C08G 77/26 (2006.01); C09D 183/08 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
G03F 7/0752 (2013.01); C07F 7/1804 (2013.01); C07F 7/1836 (2013.01); C08G 77/26 (2013.01); C08G 77/80 (2013.01); C09D 183/08 (2013.01); G03F 7/0755 (2013.01); G03F 7/0757 (2013.01); G03F 7/091 (2013.01); G03F 7/094 (2013.01); G03F 7/30 (2013.01); G03F 7/322 (2013.01); G03F 7/325 (2013.01); G03F 7/36 (2013.01); G03F 7/38 (2013.01); G03F 7/40 (2013.01); H01L 21/0274 (2013.01); H01L 21/31133 (2013.01);
Abstract

A resist underlayer film forming composition for lithography, including: as a silane, at least one among a hydrolyzable organosilane, a hydrolysis product thereof, and a hydrolysis-condensation product thereof, wherein the silane includes the silane compound of Formula (1-a) or Formula (1-b): A method for producing a semiconductor device, including: applying the resist underlayer film forming composition onto a semiconductor substrate and baking the composition to form a resist underlayer film; applying a composition for a resist onto the film to form a resist film; exposing the resist film to light; developing the resist film after exposure to obtain a patterned resist film; etching the resist underlayer film according to a pattern of the patterned resist film; and processing the semiconductor substrate according to a pattern of the resist film and the resist underlayer film.

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