The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2016
Filed:
Aug. 01, 2014
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Katsuhiko Komori, Nirasaki, JP;
Mitsuhiro Okada, Nirasaki, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/205 (2006.01); H01L 21/285 (2006.01); C23C 16/24 (2006.01); H01L 21/3205 (2006.01); H01L 21/3213 (2006.01); H01L 21/3215 (2006.01); C23C 16/04 (2006.01); C23C 16/455 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32055 (2013.01); C23C 16/045 (2013.01); C23C 16/24 (2013.01); C23C 16/45523 (2013.01); H01L 21/28556 (2013.01); H01L 21/32135 (2013.01); H01L 21/32155 (2013.01); H01L 21/76877 (2013.01);
Abstract
Provided is a method of forming a silicon film in a groove formed on a surface of an object to be processed, which includes: forming a first silicon layer on the surface of the object to be processed to embed the groove; doping impurities near a surface of the first silicon layer; forming a seed layer on the doped first silicon layer; and forming a second silicon layer containing impurities on the seed layer.