The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 25, 2016

Filed:

May. 01, 2014
Applicant:

Stats Chippac, Ltd., Singapore, SG;

Inventors:

Sun Mi Kim, Kyounggi-do, KR;

OhHan Kim, Kyunggi-do, KR;

KyungHoon Lee, Kyunggi-do, KR;

Assignee:

STATS ChipPAC Pte. Ltd., Singapore, SG;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/00 (2006.01); H01L 23/498 (2006.01); H01L 21/683 (2006.01); H01L 23/48 (2006.01); H01L 23/538 (2006.01); H01L 25/065 (2006.01); H01L 25/10 (2006.01); H01L 25/03 (2006.01); H01L 25/16 (2006.01); H01L 23/50 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49833 (2013.01); H01L 21/6835 (2013.01); H01L 23/481 (2013.01); H01L 23/5383 (2013.01); H01L 23/5389 (2013.01); H01L 24/16 (2013.01); H01L 24/19 (2013.01); H01L 24/25 (2013.01); H01L 24/29 (2013.01); H01L 24/48 (2013.01); H01L 24/83 (2013.01); H01L 24/96 (2013.01); H01L 25/03 (2013.01); H01L 25/0655 (2013.01); H01L 25/0657 (2013.01); H01L 25/105 (2013.01); H01L 25/16 (2013.01); H01L 25/50 (2013.01); H01L 23/50 (2013.01); H01L 24/13 (2013.01); H01L 24/73 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04105 (2013.01); H01L 2224/056 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13099 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/16235 (2013.01); H01L 2224/16237 (2013.01); H01L 2224/24195 (2013.01); H01L 2224/2518 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/29111 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/484 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/48228 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/83805 (2013.01); H01L 2224/85411 (2013.01); H01L 2224/85424 (2013.01); H01L 2224/85439 (2013.01); H01L 2224/85444 (2013.01); H01L 2224/85447 (2013.01); H01L 2224/85455 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/0652 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/1005 (2013.01); H01L 2225/1035 (2013.01); H01L 2225/1041 (2013.01); H01L 2225/1058 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/0103 (2013.01); H01L 2924/014 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01014 (2013.01); H01L 2924/01019 (2013.01); H01L 2924/01022 (2013.01); H01L 2924/01023 (2013.01); H01L 2924/01028 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/0132 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01073 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/01083 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/09701 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/14 (2013.01); H01L 2924/1433 (2013.01); H01L 2924/1579 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/15331 (2013.01); H01L 2924/181 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/19042 (2013.01); H01L 2924/19043 (2013.01); H01L 2924/19105 (2013.01); H01L 2924/30105 (2013.01);
Abstract

A semiconductor device has a core semiconductor device with a through silicon via (TSV). The core semiconductor device includes a plurality of stacked semiconductor die and semiconductor component. An insulating layer is formed around the core semiconductor device. A conductive via is formed through the insulating layer. A first interconnect structure is formed over a first side of the core semiconductor device. The first interconnect structure is electrically connected to the TSV. A second interconnect structure is formed over a second side of the core semiconductor device. The second interconnect structure is electrically connected to the TSV. The first and second interconnect structures include a plurality of conductive layers separated by insulating layers. A semiconductor die is mounted to the first interconnect structure. The semiconductor die is electrically connected to the core semiconductor device through the first and second interconnect structures and TSV.


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