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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9472521 B1

PDFFull Text
Date of Patent:
Oct. 18, 2016

Filed:

Nov. 02, 2012

Scheme for connector site spacing and resulting structures

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Yao-Chun Chuang, Hsin-Chu, TW;

Chita Chuang, Kaohsiung, TW;

Hao-Juin Liu, Kaohsiung, TW;

Chen-Cheng Kuo, Chu-Pei, TW;

Chen-Shien Chen, Zhubei, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Roy Potter

Assistant Examiner:

Paul Patton

Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/13 (2013.01); H01L 24/05 (2013.01); H01L 23/562 (2013.01); H01L 24/03 (2013.01); H01L 24/11 (2013.01); H01L 2224/03912 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05005 (2013.01); H01L 2224/05022 (2013.01); H01L 2224/0558 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05572 (2013.01); H01L 2224/05599 (2013.01); H01L 2224/1146 (2013.01); H01L 2224/1147 (2013.01); H01L 2224/13083 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13113 (2013.01); H01L 2224/13118 (2013.01); H01L 2224/13139 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/13157 (2013.01); H01L 2224/13164 (2013.01); H01L 2224/13169 (2013.01); H01L 2224/13171 (2013.01); H01L 2224/13172 (2013.01); H01L 2224/13184 (2013.01); H01L 2224/16238 (2013.01); H01L 2924/00014 (2013.01);
Abstract

A system and method for preventing cracks in a passivation layer is provided. In an embodiment a contact pad has a first diameter and an opening through the passivation layer has a second diameter, wherein the first diameter is greater than the second diameter by a first distance of about 10 μm. In another embodiment, an underbump metallization is formed through the opening, and the underbump metallization has a third diameter that is greater than the first diameter by a second distance of about 5 μm. In yet another embodiment, a sum of the first distance and the second distance is greater than about 15 μm.

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