The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2016

Filed:

Oct. 14, 2014
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Nitin K. Ingle, San Jose, CA (US);

Jessica Sevanne Kachian, Sunnyvale, CA (US);

Lin Xu, Sunnyvale, CA (US);

Soonam Park, Sunnyvale, CA (US);

Xikun Wang, Sunnyvale, CA (US);

Jeffrey W. Anthis, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 21/3065 (2006.01); H01L 21/02 (2006.01); C23F 1/02 (2006.01); C23F 1/12 (2006.01); H01J 37/32 (2006.01); C23F 4/00 (2006.01); H01L 21/3213 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31122 (2013.01); C23F 1/02 (2013.01); C23F 1/12 (2013.01); C23F 4/00 (2013.01); H01J 37/3244 (2013.01); H01L 21/02071 (2013.01); H01L 21/3065 (2013.01); H01L 21/31116 (2013.01); H01L 21/32135 (2013.01); H01L 21/32136 (2013.01); H01L 21/76814 (2013.01); H01J 2237/334 (2013.01); H01J 2237/3341 (2013.01);
Abstract

Methods of selectively etching metal-containing materials from the surface of a substrate are described. The etch selectively removes metal-containing materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon germanium, silicon carbide, silicon carbon nitride and/or silicon nitride. The methods include exposing metal-containing materials to halogen containing species in a substrate processing region. No plasma excites the halogen-containing precursor either remotely or locally in embodiments.


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