The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2016

Filed:

Dec. 24, 2014
Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventors:

Hirokazu Ueda, Yamanashi, JP;

Masahiro Oka, Yamanashi, JP;

Yasuhiro Sugimoto, Yamanashi, JP;

Masahiro Horigome, Hokuto, JP;

Yuuki Kobayashi, Yamanashi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/26 (2006.01); H01L 21/223 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2236 (2013.01); H01J 37/32192 (2013.01); H01J 37/32412 (2013.01);
Abstract

Disclosed is a plasma doping apparatus and a plasma doping method for performing a doping on a processing target substrate by implanting dopant ions into the processing target substrate. The plasma doping method includes a plasma doping processing performed on the processing target substrate held on a holding unit within a processing container by generating plasma using a microwave. The plasma doping method also includes an annealing processing which is performed on the processing target substrate which has been subjected to the plasma doping processing.


Find Patent Forward Citations

Ueda, Hirokazu. (2016). Doping method, doping apparatus and method of manufacturing semiconductor device (U.S. Patent No. 9472404). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9472404

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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