The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2016
Filed:
Sep. 16, 2014
Globalfoundries Inc., Grand Cayman, KY;
Deok-kee Kim, Seoul, KR;
Kenneth T. Settlemyer, Jr., Poughquag, NY (US);
Kangguo Cheng, Beacon, NY (US);
Ramachandra Divakaruni, Ossining, NY (US);
Carl J. Radens, LaGrangeville, NY (US);
Dirk Pfeiffer, Croton on Hudson, NY (US);
Timothy J. Dalton, Ridgefield, CT (US);
Katherina E. Babich, Chappaqua, NY (US);
Arpan P. Mohorowala, Mount Krisco, NY (US);
Harald Okorn-Schmidt, Villach, AT;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Increased protection of areas of a chip are provided by both a mask structure of increased robustness in regard to semiconductor manufacturing processes or which can be removed with increased selectivity and controllability in regard to underlying materials, or both. Mask structures are provided which exhibit an interface of a chemical reaction, grain or material type which can be exploited to enhance either or both types of protection. Structures of such masks include TERA material which can be converted or hydrated and selectively etched using a mixture of hydrogen fluoride and a hygroscopic acid or organic solvent, and two layer structures of similar or dissimilar materials.