The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2016
Filed:
Jan. 16, 2013
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Paul F. Ma, Santa Clara, CA (US);
Guojun Liu, San Jose, CA (US);
Annamalai Lakshmanan, Fremont, CA (US);
Dien-Yeh Wu, San Jose, CA (US);
Anantha K. Subramani, San Jose, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/768 (2006.01); C23C 16/34 (2006.01); C23C 16/455 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76838 (2013.01); C23C 16/34 (2013.01); C23C 16/45542 (2013.01); H01L 21/28562 (2013.01); H01L 21/76841 (2013.01); H01L 21/76862 (2013.01);
Abstract
Methods for depositing metal layers, and more specifically TaN layers, using CVD and ALD techniques are provided. In one or more embodiments, the method includes sequentially exposing a substrate to a metal precursor, or more specifically a tantalum precursor, followed by a high frequency plasma.