The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2016
Filed:
May. 02, 2014
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventors:
Assignee:
ASM IP Holding B.V., Almere, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/505 (2006.01); C23C 16/40 (2006.01); C23C 16/52 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45538 (2013.01); C23C 16/40 (2013.01); C23C 16/402 (2013.01); C23C 16/505 (2013.01); C23C 16/52 (2013.01); H01J 37/32137 (2013.01); H01J 37/32146 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01); H01L 21/02175 (2013.01); H01L 21/02211 (2013.01); H01L 21/02219 (2013.01); H01L 21/02274 (2013.01); H01L 21/0337 (2013.01);
Abstract
A method for forming an oxide film by plasma-assisted cyclic processing, includes: (i) supplying a precursor to a reaction space wherein a substrate is placed; (ii) applying a first RF power to the reaction space for a first period of time without supplying a precursor; and (iii) applying a second RF power to the reaction space for a second period of time without supplying the precursor, wherein the first RF power is lower than the second RF power, and/or the first period of time is shorter than the second period of time.
Published as: