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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9457406 B1

PDFFull Text
Date of Patent:
Oct. 04, 2016

Filed:

Sep. 13, 2010

Copper metal film, method for producing same, copper metal pattern, conductive wiring line using the copper metal pattern, copper metal bump, heat conduction path, bonding material, and liquid composition

Applicants:

Hideo Nakako, Tsukuba, JP;

Kazunori Yamamoto, Tsukuba, JP;

Yasushi Kumashiro, Chikusei, JP;

Shunya Yokosawa, Tsukuba, JP;

Katsuyuki Masuda, Tsukuba, JP;

Yoshinori Ejiri, Chikusei, JP;

Maki Inada, Tsukuba, JP;

Kyoko Kuroda, Chikusei, JP;

Inventors:

Hideo Nakako, Tsukuba, JP;

Kazunori Yamamoto, Tsukuba, JP;

Yasushi Kumashiro, Chikusei, JP;

Shunya Yokosawa, Tsukuba, JP;

Katsuyuki Masuda, Tsukuba, JP;

Yoshinori Ejiri, Chikusei, JP;

Maki Inada, Tsukuba, JP;

Kyoko Kuroda, Chikusei, JP;

Assignee:

HITACHI CHEMICAL COMPANY, LTD., Tokyo, JP;

Attorney:

Fitch, Even, Tabin & Flannery, LLP

Primary Examiner:

Adam Krupicka

Int. Cl.
CPC ...
B22F 3/24 (2006.01); B22F 9/26 (2006.01); B32B 15/01 (2006.01); C22C 5/04 (2006.01); C22C 9/00 (2006.01); H01B 1/02 (2006.01); H05K 3/12 (2006.01); B22F 9/22 (2006.01); B22F 1/02 (2006.01); H05K 1/09 (2006.01); H05K 3/10 (2006.01);
U.S. Cl.
CPC ...
B22F 9/26 (2013.01); B32B 15/01 (2013.01); C22C 5/04 (2013.01); C22C 9/00 (2013.01); H01B 1/026 (2013.01); H05K 3/1283 (2013.01); B22F 1/02 (2013.01); B22F 9/22 (2013.01); B22F 2201/01 (2013.01); B22F 2301/10 (2013.01); B22F 2302/25 (2013.01); H05K 1/097 (2013.01); H05K 3/105 (2013.01); H05K 2201/0224 (2013.01); H05K 2201/0272 (2013.01); H05K 2203/0315 (2013.01); H05K 2203/1131 (2013.01); H05K 2203/1157 (2013.01); Y10T 156/10 (2015.01); Y10T 428/12903 (2015.01);
Abstract

Disclosed are: a copper metal film which has good adhesion to a substrate, low volume resistivity, and good deep-part metal properties; and a method for producing a copper metal film, wherein the copper metal film can be produced by reducing a substrate to a deep part thereof without damaging the substrate. Specifically disclosed is a copper metal film obtained by treating a copper-based particle deposition layer containing both copper oxides and a metallic transition metal or alloy, or a transition metal complex containing a metal element, with gaseous formic acid and/or formaldehyde heated to 120° C. or higher. The copper oxide is preferably copper (I) oxide and/or copper (II) oxide. The transition metal, alloy or metal complex are preferably a metal selected from the group consisting of Cu, Pd, Pt, Ni, Ag, Au and Rh, an alloy containing the metal, or a complex containing the metal element, respectively.

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