The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2016
Filed:
May. 21, 2013
Kla-tencor Corporation, Milpitas, CA (US);
Li Wang, San Ramon, CA (US);
Daimian Wang, Fremont, CA (US);
Yanwei Liu, Danville, CA (US);
Alan Michael Aindow, Alameda, CA (US);
KLA-Tencor Corporation, Milpitas, CA (US);
Abstract
Photoelectron emission mapping systems for use with EUV (extreme ultraviolet) mask inspection and lithography systems are described. The mapping systems may be used to provide photoelectron emission maps for EUV photolithography masks and/or EUV mirrors. The systems use EUV photoelectron sources used for mask inspection or photolithography to impinge EUV light on the masks and/or mirrors. The EUV light generates photoelectron on the surfaces of the mask and/or mirrors and the photoelectrons are collected and analyzed by detectors placed away from optical spaces of the EUV chamber.