The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2016
Filed:
May. 29, 2015
Rohm and Haas Electronic Materials Llc, Marlborough, MA (US);
Dow Global Technologies Llc, Midland, MI (US);
Phillip D. Hustad, Natick, MA (US);
Jong Keun Park, Westborough, MA (US);
Jin Wuk Sung, Northborough, MA (US);
James Heejun Park, Cambridge, MA (US);
Dow Global Technologies LLC, Midland, MI (US);
Rohm and Haas Electronic Materials LLC, Marlborough, MA (US);
Abstract
Pattern shrink methods comprise: (a) providing a semiconductor substrate comprising one or more layers to be patterned; (b) providing a resist pattern over the one or more layers to be patterned; (c) coating a shrink composition over the pattern, wherein the shrink composition comprises a polymer and an organic solvent, wherein the polymer comprises a group containing a hydrogen acceptor effective to form a bond with an acid group and/or an alcohol group at a surface of the resist pattern, and wherein the composition is free of crosslinkers; and (d) rinsing residual shrink composition from the substrate, leaving a portion of the polymer bonded to the resist pattern. Also provided are pattern shrink compositions, and coated substrates and electronic devices formed by the methods. The invention find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.