The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2016
Filed:
Dec. 03, 2014
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Yu-Ying Hsu, Pingzhen, TW;
Tzu-Heng Chang, New Taipei, TW;
Jen-Chou Tseng, Jhudong Township, TW;
Ming-Hsiang Song, Shin-Chu, TW;
Johannes Van Zwol, Beek-Ubbergen, NL;
Taede Smedes, Nijmegen, NL;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Methods and apparatus for ESD structures. A semiconductor device includes a first active area containing an ESD cell coupled to a first terminal and disposed in a well; a second active area in the semiconductor substrate, the second active area comprising a first diffusion of the first conductivity type for making a bulk contact to the well; and a third active area in the semiconductor substrate, separated from the first and second active areas by another isolation region, a portion of the third active area comprising an implant diffusion of the first conductivity type within a first diffusion of the second conductivity type and adjacent a boundary with the well of the first conductivity type; wherein the third active area comprises a diode coupled to the terminal and reverse biased with respect to the well of the first conductivity type.