The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2016
Filed:
Dec. 30, 2014
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Yen-Di Tsen, Chung-Ho, TW;
Yi-Ping Hsieh, Hsinchu, TW;
Chen-Yen Huang, Jhunan Township, TW;
Shin-Rung Lu, Chu-Pei, TW;
Jong-I Mou, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A method of processing first and second semiconductor wafers is provided. Each of the first and second semiconductor wafers has a first layer and a second layer over the first layer. A first lithographic process is performed on the first layer over the first semiconductor wafer using a first inter-field correction and a first intra-field correction. An overlay error of the first lithographic process is determined. A second inter-field correction and a second intra-field correction are computed based on the first inter-field correction, the first intra-field correction, and the measured overlay error. A second lithographic process is performed on the second layer over the second semiconductor wafer, based on the second inter-field correction and the second intra-field correction.