The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2016
Filed:
Jun. 15, 2012
Ming Di, Hayward, CA (US);
Torsten Kaack, Los Altos, CA (US);
Qiang Zhao, Milpitas, CA (US);
Xiang Gao, San Jose, CA (US);
Leonid Poslavsky, Belmont, CA (US);
Ming Di, Hayward, CA (US);
Torsten Kaack, Los Altos, CA (US);
Qiang Zhao, Milpitas, CA (US);
Xiang Gao, San Jose, CA (US);
Leonid Poslavsky, Belmont, CA (US);
KLA-Tencor Corporation, Milpitas, CA (US);
Abstract
The present invention includes generating a three-dimensional design of experiment (DOE) for a plurality of semiconductor wafers, a first dimension of the DOE being a relative amount of a first component of the thin film, a second dimension of the DOE being a relative amount of a second component of the thin film, a third dimension of the DOE being a thickness of the thin film, acquiring a spectrum for each of the wafers, generating a set of optical dispersion data by extracting a real component (n) and an imaginary component (k) of the complex index of refraction for each of the acquired spectrum, identifying one or more systematic features of the set of optical dispersion data; and generating a multi-component Bruggeman effective medium approximation (BEMA) model utilizing the identified one or more systematic features of the set of optical dispersion data.