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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9437718 B1

PDFFull Text
Expired
Date of Patent:
Sep. 06, 2016

Filed:

May. 12, 2015

Semiconductor-on-insulator (soi) lateral heterojunction bipolar transistor having a wide band gap emitter/collector which are epitaxially grown

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Jin Cai, Cortlandt Manor, NY (US);

Kevin K. Chan, Staten Island, NY (US);

Tak H. Ning, Yorktown Heights, NY (US);

Jeng-Bang Yau, Yorktown Heights, NY (US);

Joonah Yoon, Fishkill, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorneys:

Scully, Scott, Murphy & Presser, P.C.

Louis J. Percello, Esq.

Primary Examiner:

Monica D Harrison

Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/737 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 29/06 (2006.01); H01L 29/161 (2006.01); H01L 29/165 (2006.01); H01L 21/02 (2006.01); H01L 29/735 (2006.01);
U.S. Cl.
CPC ...
H01L 29/737 (2013.01); H01L 21/02529 (2013.01); H01L 21/02532 (2013.01); H01L 21/02645 (2013.01); H01L 29/0649 (2013.01); H01L 29/0653 (2013.01); H01L 29/0808 (2013.01); H01L 29/0817 (2013.01); H01L 29/0821 (2013.01); H01L 29/16 (2013.01); H01L 29/161 (2013.01); H01L 29/165 (2013.01); H01L 29/1608 (2013.01); H01L 29/6625 (2013.01); H01L 29/66242 (2013.01); H01L 29/735 (2013.01);
Abstract

A method of forming a semiconductor structure includes forming a first seed layer, a second seed layer and an intrinsic base spaced apart from each other and with the intrinsic base located between the first seed layer and the second seed layer on an insulator layer. The method further includes forming an emitter on the first seed layer and on a first vertical surface of the intrinsic base by epitaxially growing the emitter from the first seed layer and the first vertical surface of the intrinsic base, and forming a collector on the second seed layer and on a second vertical surface of the intrinsic base by epitaxially growing the collector from the second seed layer and the second vertical surface of the intrinsic base.

Find Patent Forward Citations

Cai, Jin. (2016). Semiconductor-on-insulator (soi) lateral heterojunction bipolar transistor having a wide band gap emitter/collector which are epitaxially grown (U.S. Patent No. 9437718). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9437718

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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