The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2016
Filed:
Mar. 07, 2014
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Yen-Chun Huang, New Taipei, TW;
Bor Chiuan Hsieh, Taoyuan, TW;
Tai-Chun Huang, Hsin-Chu, TW;
Chia-Ying Lee, New Taipei, TW;
Tze-Liang Lee, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method embodiment includes forming a protective liner over the substrate and forming an inter-layer dielectric over the protective liner. The protective liner covers a sidewall of a gate spacer. The method further includes patterning a contact opening in the first ILD to expose a portion of the protective liner. The portion of the protective liner in the contact opening is removed to expose an active region at a top surface of the semiconductor substrate. A contact is formed in the contact opening. The contact is electrically connected to the active region.