The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2016
Filed:
Dec. 02, 2011
Applicants:
Dirk Beyer, Weimar, DE;
Vladimir Dmitriev, Karmiel, IL;
Ofir Sharoni, Karkur, IL;
Nadav Wertsman, Ein Hod, IL;
Inventors:
Dirk Beyer, Weimar, DE;
Vladimir Dmitriev, Karmiel, IL;
Ofir Sharoni, Karkur, IL;
Nadav Wertsman, Ein Hod, IL;
Assignees:
Carl Zeiss SMS GmbH, Jena, DE;
Carl Zeiss SMS Ltd., Karmiel, IL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03B 27/68 (2006.01); G03B 27/62 (2006.01); G03F 1/72 (2012.01); G03F 1/84 (2012.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 1/72 (2013.01); G03F 1/84 (2013.01); G03F 7/70466 (2013.01); G03F 7/70625 (2013.01); G03F 7/70633 (2013.01);
Abstract
The invention relates to a method for correcting at least one error on wafers processed by at least one photolithographic mask, the method comprises: (a) measuring the at least one error on a wafer at a wafer processing site, and (b) modifying the at least one photolithographic mask by introducing at least one arrangement of local persistent modifications in the at least one photolithographic mask.