The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 30, 2016

Filed:

Jul. 08, 2014
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd, Hsin-Chu, TW;

Inventors:

Po-Ju Chen, Hsinchu, TW;

Chih-Ching Cheng, Xizhou Township, TW;

Hsin-Yi Tsai, Hsinchu, TW;

Xiao-Meng Chen, Baoshan Township, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/36 (2006.01); H01J 37/32 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32559 (2013.01); C23C 16/4404 (2013.01); C23C 16/45563 (2013.01); C23C 16/45565 (2013.01); H01J 37/3244 (2013.01); H01J 37/32495 (2013.01); H01J 37/32807 (2013.01); H01L 21/3065 (2013.01); H01L 21/31116 (2013.01); H01L 21/31138 (2013.01); H01L 21/32136 (2013.01);
Abstract

A plasma-processing apparatus is provided. The plasma-processing apparatus includes a processing chamber having an upper portion and a lower portion. The upper portion has a gas inlet. The plasma-processing apparatus includes an upper electrode plate disposed in the upper portion. The upper electrode plate has gas holes passing through the upper electrode plate. The plasma-processing apparatus includes a protective layer disposed over inner walls of the gas holes. The protective layer and the upper electrode plate have different materials. The plasma-processing apparatus includes a lower electrode pedestal disposed in the lower portion for supporting a substrate.


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