The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 30, 2016

Filed:

Apr. 29, 2011
Applicants:

Markus Waiblinger, Constance, DE;

Michael Budach, Hanau, DE;

Thomas Scherübl, Jena, DE;

Dirk Beyer, Weimar, DE;

Inventors:

Markus Waiblinger, Constance, DE;

Michael Budach, Hanau, DE;

Thomas Scherübl, Jena, DE;

Dirk Beyer, Weimar, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01N 23/00 (2006.01); H01J 37/28 (2006.01); G01N 23/22 (2006.01); G01N 23/225 (2006.01); G03F 1/86 (2012.01); G03F 1/24 (2012.01);
U.S. Cl.
CPC ...
H01J 37/28 (2013.01); G01N 23/2208 (2013.01); G01N 23/2251 (2013.01); G03F 1/86 (2013.01); G01N 2223/072 (2013.01); G01N 2223/079 (2013.01); G03F 1/24 (2013.01);
Abstract

The invention relates to a method for determining a performance of a photolithographic mask at an exposure wavelength with the steps of scanning at least one electron beam across at least one portion of the photolithographic mask, measuring signals generated by the at least one electron beam interacting with the at least one portion of the photolithographic mask, and determining the performance of the at least one portion of the photolithographic mask at the exposure wavelength based on the measured signals.


Find Patent Forward Citations

Loading…