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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9427830 B1

PDFFull Text
Date of Patent:
Aug. 30, 2016

Filed:

Jun. 23, 2010

Copper alloy bonding wire for semiconductor

Applicants:

Tomohiro Uno, Tokyo, JP;

Shinichi Terashima, Tokyo, JP;

Takashi Yamada, Saitama, JP;

Daizo Oda, Saitama, JP;

Inventors:

Tomohiro Uno, Tokyo, JP;

Shinichi Terashima, Tokyo, JP;

Takashi Yamada, Saitama, JP;

Daizo Oda, Saitama, JP;

Assignees:

NIPPON STEEL & SUMIKIN MATERIALS CO., LTD., Tokyo, JP;

NIPPON MICROMETAL CORPORATION, Iruma-Shi, Saitama, JP;

Attorney:

Troutman Sanders LLP

Primary Examiner:

Jennifer Chriss

Assistant Examiner:

Ricardo E Lopez

Int. Cl.
CPC ...
C22C 9/08 (2006.01); B32B 15/20 (2006.01); B23K 35/30 (2006.01); B21C 1/00 (2006.01); B21C 37/04 (2006.01); B23K 35/02 (2006.01); C22C 9/00 (2006.01); C22F 1/08 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
B23K 35/302 (2013.01); B21C 1/003 (2013.01); B21C 37/047 (2013.01); B23K 35/0261 (2013.01); C22C 9/00 (2013.01); C22F 1/08 (2013.01); H01L 24/43 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/435 (2013.01); H01L 2224/4321 (2013.01); H01L 2224/43848 (2013.01); H01L 2224/45015 (2013.01); H01L 2224/4554 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/4851 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48465 (2013.01); H01L 2224/48507 (2013.01); H01L 2224/48599 (2013.01); H01L 2224/48624 (2013.01); H01L 2224/48824 (2013.01); H01L 2224/85181 (2013.01); H01L 2924/01004 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01014 (2013.01); H01L 2924/01015 (2013.01); H01L 2924/01018 (2013.01); H01L 2924/01022 (2013.01); H01L 2924/01025 (2013.01); H01L 2924/01027 (2013.01); H01L 2924/01028 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01045 (2013.01); H01L 2924/01046 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/01327 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/15747 (2013.01); H01L 2924/181 (2013.01); H01L 2924/20751 (2013.01); H01L 2924/20752 (2013.01); H01L 2924/20755 (2013.01); Y10T 428/2958 (2015.01);
Abstract

The present invention is a copper-based bonding wire for use in a semiconductor element. The bonding wire of the present invention can be manufactured with an inexpensive material cost, and has a superior PCT reliability in a high-humidity/temperature environment. Further, the bonding wire of the present invention exhibits: a favorable TCT reliability through a thermal cycle test; a favorable press-bonded ball shape; a favorable wedge bondability; a favorable loop formability, and so on. Specifically, the bonding wire of the present invention is a copper alloy bonding wire for semiconductor manufactured by drawing a copper alloy containing 0.13 to 1.15% by mass of Pd and a remainder comprised of copper and unavoidable impurities.

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