The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 23, 2016

Filed:

May. 20, 2014
Applicant:

Xintec Inc., Taoyuan County, TW;

Inventors:

Yi-Ming Chang, Taoyuan County, TW;

I-Min Lin, Taipei County, TW;

Po-Shen Lin, Taoyuan County, TW;

Assignee:

XINTEC INC., Taoyuan County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05K 3/06 (2006.01); H01L 21/48 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H05K 3/40 (2006.01); H05K 3/24 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H05K 3/06 (2013.01); H01L 21/4853 (2013.01); H01L 21/7685 (2013.01); H01L 21/76852 (2013.01); H01L 21/76885 (2013.01); H01L 23/53238 (2013.01); H01L 24/05 (2013.01); H05K 3/4007 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 2224/0235 (2013.01); H01L 2224/0239 (2013.01); H01L 2224/02311 (2013.01); H01L 2224/02313 (2013.01); H01L 2224/02317 (2013.01); H01L 2224/02319 (2013.01); H01L 2224/02331 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05548 (2013.01); H01L 2224/1148 (2013.01); H01L 2224/13022 (2013.01); H01L 2224/13024 (2013.01); H01L 2224/13111 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/12041 (2013.01); H05K 3/244 (2013.01); H05K 2201/0367 (2013.01);
Abstract

A wiring structure for improving a crown-like defect and a fabrication method thereof are provided. The method includes the following steps. A substrate, on which a seed layer and a patterned photoresist layer with an opening are formed, is provided. A copper layer, having a bottom covering the seed layer, is formed in the opening. A barrier layer covering at least one top portion of the copper layer is formed on the copper layer. An oxidation potential of the barrier layer is greater than that of the copper layer. The patterned photoresist layer is removed to perform an etching process, wherein the copper layer and a portion of the seed layer exposed are etched to form a wiring layer. An immersion process is performed to form an anti-oxidation layer comprehensively on exposed surfaces of the barrier layer and the wiring layer.


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