The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2016
Filed:
Dec. 11, 2013
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Johannes Georg Laven, Taufkirchen, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Peter Irsigler, Obernberg am Inn, AT;
Holger Huesken, Munich, DE;
Roman Baburske, Otterfing, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1095 (2013.01); H01L 29/0696 (2013.01); H01L 29/7397 (2013.01); H01L 29/7813 (2013.01); H01L 29/861 (2013.01);
Abstract
A semiconductor device includes a pn junction between a drift zone and a charge-carrier transfer region in a semiconductor body. An access channel provides a permanent charge carrier path connecting the drift zone with a recombination region through a separation region between the drift zone and the recombination region. The access channel adjusts a plasma density in the drift zone and the recombination region.