The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 16, 2016
Filed:
Nov. 13, 2013
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Uwiz Technology Co., Ltd., Zhongli, TW;
Chia-Jung Hsu, Dacheng Township, TW;
Yun-Lung Ho, Miaoli, TW;
Neng-Kuo Chen, Sinshih Township, TW;
Wen-Feng Chueh, Tainan, TW;
Sey-Ping Sun, Hsinchu, TW;
Song-Yuan Chang, Minxiong Township, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
UWiZ Technology Co., Ltd., Zhongli, TW;
Abstract
The present disclosure relates to a chemical mechanical polishing (CMP) slurry composition that provides for a high metal to dielectric material selectivity along with a low rate of metal recess formation. In some embodiments, the disclosed slurry composition has an oxidant and an etching inhibitor. The oxidant has a compound with one or more oxygen molecules. The etching inhibitor has a nitrogen-oxide compound. The etching inhibitor reduces the rate of metal and dielectric material (e.g., oxide) removal, but does so in a manner that reduces the rate of dielectric material removal by a larger amount, so as to provide the slurry composition with a high metal (e.g., germanium) to dielectric material removal selectivity and with a low rate of metal recess formation.