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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9412870 B1

PDFFull Text
Date of Patent:
Aug. 09, 2016

Filed:

Aug. 24, 2015

Device with engineered epitaxial region and methods of making same

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

King-Yuen Wong, Tuen Mun, HK;

Chia-Yu Lu, Hsin-Chu, TW;

Chien-Chang Su, Kaohsiung, TW;

Yen-Chun Lin, Hsin-Chu, TW;

Yi-Fang Pai, Hsin-Chu, TW;

Da-Wen Lin, Hsin-Chu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Mohammad Islam

Assistant Examiner:

Joannie A Garcia

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/78 (2006.01); H01L 21/8238 (2006.01); H01L 21/8249 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 29/165 (2006.01); H01L 27/06 (2006.01); H01L 29/04 (2006.01); H01L 29/167 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7848 (2013.01); H01L 21/0262 (2013.01); H01L 21/02532 (2013.01); H01L 21/8249 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 27/0623 (2013.01); H01L 29/045 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01); H01L 29/167 (2013.01); H01L 29/66636 (2013.01); H01L 29/7834 (2013.01);
Abstract

A device includes a substrate and a recess in the substrate. The recess has a bottom and sidewalls. The device also includes a first epitaxial layer over the bottom of the recess, and a second epitaxial layer over the first epitaxial layer and over the sidewalls of the recess, the second epitaxial layer having a different lattice constant than the substrate. The device further includes a third epitaxial layer over the second epitaxial layer and filling the recess.

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